Back end device

Phase-change memory is expected to serve as the next-generation of memory technology, but present applications still require large amounts of power for rewriting data due to the energy required to switch between crystal and amorphous states via melting. We have proposed a new phase-change recording process that operates with much smaller power as it only requires local changes in Ge atom coordination in conventional GeSbTe. We have demonstrated successful operation of a new device that requires 1/10 the power of current devices using a GeTe/Sb2Te3 superlattice structure. This superlattice structure was also found to give rise to world record setting magnetoresistance effect at room temperature with an electric resistance change of 2000% upon application of a magnetic field. The mechanism of this remarkable effect is attributed to a new form of quantum matter called topological insulators.

We are continuing our work to discover new materials which operate with lower- power as well as establish baselines and application for the novel properties of topological insulators.