Topics

2013.6.21

Achieved world highest mobility with Ge nano-wire transistor

We produced Ge nano-wire pMOSFET adopting compressive strain, and achieved 1900cm²/Vs hole mobility that is about 12 times of Si. The point is to insert plasma oxidized ultrathin Ge oxide film between Al2O3 gate insulating film and Ge. As a result, quality of gate insulating film interface as well as mobility improved, and off-leakage current decreased down to 1/100. These characteristics improvement is expected to contribute to power consumption reduction in CMOS low voltage operation.

図 Geナノワイヤトランジスタで世界最高移動度達成グラフ

2012.12.01

GNC holds research debriefing session!!

Time & Date :
10:00~18:00, Wednesday, 13 March, 2013
Place :
Hitotsubashi Hall
(National Center of Sciences, 2-1-2 Hitotsubashi, Chiyoada-ku, Tokyo)
Admission fee : Free
(3000 yen for "exchange of views" meeting)

Along with lectures by the guests and invited speakers representing industry and academia, major researchers involved in this Selected Project will report their working results by oral presentation and in poster session as well.
From 18:00 the "exchange of views" meeting will be held, and we look forward to meeting with you!

2013 GNC holds research debriefing session, Wednesday, 13 March, 2013, Hitotsubashi Lecture Hall

[ http://www.gnc-sympo.jp/ ]

2012.10.24

Sent out a press release on two GNC’s research achievement

Developed device operation model for tunnel field-effect transistor

Simulation model was developed that expects electronic behavior under strong electric field such as tunnel effect.

Related articles: Research Activities
For more details, please see AIST website


Developed new conduction control technology for Graphene

On/Off setting of Graphene which has been difficult was achieved by irradiation of helium ion.

Related articles: Research Activities
For more details, please see AIST website

2012.8.29

GNC researcher’s paper was selected as SSDM2012 remarkable paper

The following paper posted by Dr. Shu Nakaharai, GNC was selected as the remarkable paper of SSDM (International Conference on Solid State Devices and Materials) 2012 to be held from 25 to 27 September in Kyoto. Your attendance will be most welcomed.

For more detailed information, click here.

Title Room Temperature On-Off Operation of Current in He Ion Irradiated Graphene
Authors S.Nakaharai, T.Iijima, S.Ogawa, S.Suzuki, H.Miyazaki, S.Li, K.Tsukagoshi, S.Sato and N.Yokoyama
Date September 25-27, 2012
Place Kyoto International Conference Center, Kyoto, Japan
Organizer SSDM 2012 [http://www.ssdm.jp/]

2012.6.15

GNC has developed high performance strain germanium nano-wire transistor

GNC has developed a transistor with high-current operation of world-class level, of which hole-mobility is eight times larger than Si transistor. This was achieved by making large compressive strain in Ge channel of nano-wire transistor. This transistor does not dope impurities in channel, which minimizes characteristic variation and is expected to lower power consumption considerably.

For more detailed information, click here.

Topics Figure 1Topics Figure 2

2011.12.6

International Symposium

Place: 7F MIRAICAN Hall, National Museum of Emerging Science and Innovation (Miraikan), Tokyo Japan
Date & Time: March 14, 2012 (Wednesday), 10:00 - 18:00
fee : Free for Symposium (Networking Reception : 3,000yen)

In addition to the GNC interim report, the International Symposium was held which included the lectures and panel discussions of invited speakers from home and abroad.

For more details, click on a banner below.
Networking Reception

Presentation materials on the day of the symposium and photo reports have been uploaded.

2011.10.18

Room temperature giant magnetoresistivity from interfacial phase-change memory

Through a phase-change memory research (Backend device) in GNC project, we found that a giant magnetoresistivity >2000% is generated at room temperature from non-magnetic phase-change memory materials: Ge, Sb and Te, without any ferromagnetic elements.
The phase-change material is named "interfacial phase-change memory (iPCM), " which consists of a crystalline multilayer, GeTe/Sb2Te3 with a growth orientation.

See here for the details.

図 超格子相変化膜を備えたPCRAMデバイスのスイッチ動作 Copyright: American Institute of Physics

2011.9.12

GNC members received the excellent theses award from the Japan Society of Applied Physics (JSAP)

The following theses, which will be one precursor of GNC’s research themes, received the 2011 JSAP excellent theses award.

Award certificateMedal

33rd JSAP AWARDS (Year 2011)

Award Recipients Daiyu Kondo, Shintaro Sato, Katsunori Yagi, Naoki Harada, Motonobu Sato, Mizuhisa Nihei, and Naoki Yokoyama
Title of the Paper Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
Journal Appl. Phys. Express 3 (2010) 025102