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データ編DATA国際学会発表 2013年度招待講演発表題目発表者発表日開催地学会名主催者Reconsideration of switching energy in PRAM, and a proposal for entropy-controlled PRAM with topological insulating and spintronics functionsJ.Tominaga2014年2月25日Seoul, Korea21st Korean Conference on Semiconductors (KCS 2014)Hanyang UniversityGe-on-insulator MOSFETs for high-performance and 3D stacking applicationsT.Tezuka, K.Ikeda, Y.Kamata, Y.Kamimuta, K.Usuda, Y.Moriyama, M.Ono, M.Koike, M.Oda, T.Irisawa, K.Furuse, E.Kurosawa2013年12月19日Bangalore. IndiaIUMRS-ICA2013International Union of Material Research SocietiesMultilayer Graphene Wires Obtained by Annealing Sputtered Amorphous Carbon, and their Transfer on Tungsten Plugs and Carbon Nanotubes Plugs for Carbon InterconnectsM.Sato, M.Takahashi, M.Nihei, S.Sato, N.Yokoyama2013年12月17日Las Vegas, USAInternational Conference on Small Science (ICSS 2013)OAHOSTEntropy-controlled Phase Change Memory with an Extraordinary Small Switching EnergyJ.Tomonaga、P.Fons、A.Kolobov、S.Murakami2013年10月31日San Francisco, U.S.A224th ECS Meeting Electrochemical SocietyExtremely Short Channel Si-MOSFETs Prepared on SOI Substrates Using Anisotropic Wet EtchingS.Migita, Y.Morita, M.Masahara, H.Ota2013年10月28日San Francisco, U.S.A224th ECS MeetingElectrochemical Society3D Integration of High Mobility InGaAs nFETs and Ge pFETs for Ultra Low Power and High Performance CMOS H.Irisawa, M.Oda, T.Tezuka, K.Ikeda, Y.Moriyama, Y.Kamimuta, T.Maeda, E.Mieda, J.Wipakorn, O.Ichikawa, T.Osada, M.Hata2013年10月7日Monterey, U.S.AIEEE SOI-3D-Subthreshold Microelectronics Technology Unied ConferenceIEEEPhase-change mom volatile memory equipped with topological insulating properties - Fusion of PCRAM and spintronics-J.Tominaga, A.Kolobov, J.P.Fons, T.Nakano, M.Hase, S.Murakami2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsAtomically thin semiconducting channels for future nano-electronicsK.Tsukagoshi2013年9月23日Rio de Janeiro, Brazil Graphene Brazil 2013Spin-strage mechanism in interfacial phase-change memory(iPCM)J.Tominaga, A.Kolobov, P.J.Fons, S.Wang, J.H.Richter, Y.Saito, T.Nakano2013年9月9日Berlin, GermanyEPCOS 2013 SymposiumHimex Energy Solutions, Foundation - Micron Technology, Inc.Atomically thin semiconducting channels for future nano-electronicsK.Tsukagoshi2013年9月5日 Boston, USA Crystal & Graphene Science Symposium-2013 on 'Crystal Engineering to Graphenes, Fullerenes, Carbon Nanotubes & Semiconductors'GeneExpression Systems & Appasani Research Conferences of USAApplication of Graphene to Transistors and Interconnects for Future LSIsS.Sato, D.Kondo and N.Yokoyama2013年8月29日Jeju, Korea"35th International Symposium on Dry Process (DPS2013)The Japan Society of Applied PhysicsAPPLICATION OF GRAPHENE AND CARBON NANOTUBES TO TRANSISTORS AND INTERCONNECTS FOR FUTURE LSIShintaro Sato and Naoki Yokoyama2013年8月19日Singapore15th ASIAN CHEMICAL CONGRESS 2013Singapore National Institute of ChemistryAtomically thin semiconducting channels for future nano-electronicsK.Tsukagoshi2013年7月10日Seoul, KoreaNano KOREA 2013NANO KOREA Organizing CommitteeAtomic Layer Deposition and Solid Phase Epitaxial Growth of HfO2 Films on Si Substrates for MOSFET ApplicationsS.Migita, Y.Morita, M.Masahara, H.Ota2013年7月1日つくば2013 NIMS ConferenceNIMSDevice Design Consideration in Tunnel Field-Eect Transistors for Improved Current Drivability H.Ota, Y.Morita, T.Mori, S.Migita, K.Fukuda, W.Mizubayashi, A.Tanabe, T.Maeda, N.Miyata, K.Endo, Y.Liu, T.Matsukawa, S.O'uchi, M.Masahara2013年6月27日Seoul2013 Asia-Pacic Workshop on Fundamentals and Applications of Advanced Semiconductor DevicesIEEK & IECIESemiconductor Wafer Bonding -Structural and Electrical Characteristics of GeOI Substrates-A.Sakai, S.Yamasaka, Y.Moriyama, J.Kikkawa, S.Takeuchi, Y.Nakamura, T.Tezuka, K.Izunome2013年6月26日Seoul2013 Asia-Pacic Workshop on Fundamentals and Applications of Advanced Semiconductor DevicesIEEK & IECIEMOSFET Scaling to 3-nm-Long and 1-nm-Thick Channel S.Migita, Y.Morita, M.Masahara, H.Ota2013年6月9日Kyoto2013 Silicon Nanoelectronics WorkshopJSAP and IEEE EDSGraphene Nanoribbon Growth and Dual-Gated Graphene TransistorsS.Sato and N.Yokoyama 2013年5月13日Toronto, Canada 223rd ECS MeetingThe Electrochmical Society一般発表(主要学会)Low Dit High-k/In0.53Ga0.47As Gate Stack, with CET Down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial ReactionD. Hassan Zadeh, H. Oomine, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai2013年12月9日Washington, DC 2013 International Electron Devices MeetingIEEEHigh Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Growth on Narrow Fin StructuresT.Irisawa, M.Oda, K.Ikeda, Y.Moriyama, E.Mieda, W.Jevasuwan, T.Maeda, O.Ichikawa, T.Osada, M.Hata, Y.Miyamoto, T.Tezuka2013年12月9日Washington, DC 2013 International Electron Devices MeetingIEEEAdvantage of (001)/<100> oriented Channels in Biaxially- and Uniaxially Strained-Ge-on-Insulator pMOSFETs with NiGe Metal Source/DrainK.Ikeda, Y.Moriyama, Y.Kamimuta, M.Ono, T.Irisawa, M.Oda, E.Kurosawa, T.Tezuka2013年12月9日Washington, DC 2013 International Electron Devices MeetingIEEENovel Implantation Process of Carbon Nanotubes for Plugs and Vias, and their Integration with Transferred Multilayer Graphene WireM.Sato, M.Takahashi, M.Nihei, S.Sato, N.Yokoyama2013年12月9日Washington, DC 2013 International Electron Devices MeetingIEEEIntercalated multi-layer graphene interconnects for future LSIS.Sato, H.Nakano, B.Zhou, D.Kondo, K.Hayashi, J.Yamaguchi, K.Yagi, A.Yamada, M.Takahashi, M.Sato, N.Yokoyama2013年12月1日Boston, USAMRS Fall MeetingMRSElectron Doping of Graphene with Self – Assembled MonolayersA.Yamada, K.Yagi, M.Harigae, J.Yamaguchi, S.Sato, N.Yokoyama2013年12月1日Boston, USAMRS Fall MeetingMRSPreferential Synthesis of Semiconductor Single-Walled Carbon Nanotubes based on the catalyst control approachS.Sakurai, M.Yamada, H.Yamada, D.Futaba, K.Hata2013年12月1日Boston, USAMRS Fall MeetingMRSElectrical Characterization of Atomic Layer Deposited La2O3 Films on In0.53Ga0.47As SubstratesH. Oomine, D. H. Zadeh, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai2013年10月30日San Francisco, U.S.A224th ECS MeetingElectrochemical SocietyCharacterization of Local Strain Structures in Heteroepitaxial Ge1−xSnx/Ge Microstructures by using Microdiraction MethodS.Ike, Y.Moriyama, M.Kurosawa, N.Taoka, O.Nakatsuka, Y.Imai, S.Kimura, T.Tezuka, S.Zaima 2013年10月27日San Francisco, U.S.A224th ECS MeetingElectrochemical SocietyThermal Stability of Epitaxial NiGe Layers Formed on Ge(110) SubstrateY. S. Deng, O. Nakatsuka, N. Taoka, and S. Zaima2013年10月9日Tokyo Univ. Advanced Metallization Conference 2013 (ADMETA Plus 2013)The Japan Society of Applied PhysicsCharacterization of 10-layer graphene interconnects fabricated by 10-time transfer of single-layer CVD-grown grapheneH.Nakano, D.Kondo, B.Chou, K.Hayashi, K.Yagi, M.Takahashi, M.Sato, S.Sato, N.Yokoyama2013年10月8日Tokyo Univ. Advanced Metallization Conference 2013 (ADMETA Plus 2013)The Japan Society of Applied PhysicsTransfer Process and Contact Resistance of Multilayer Graphene Wires on Tungsten Plugs for Local InterconnectsM.Sato, M.Takahashi, M.Nihei, S.Sato, N.Yokoyama2013年10月8日Tokyo Univ. Advanced Metallization Conference 2013 (ADMETA Plus 2013)The Japan Society of Applied PhysicsCMOS-Compatible Mesa-Etched Ultrathin Epitaxial Channel Tunnel Field-Eect TransistorsY.Morita, T.Mori, S.Migita, W.Mizubayashi, A.Tanabe, K.Fukuda, T.Matsukawa, K.Endo, S.O'uchi, Y.Liu, M.Masahara, H.Ota2013年9月27日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsGNC主要成果発表実績(2014年2月28日現在)57

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