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データ編DATAScalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State DensityD.H.Zadeh, H.Oomine, K.Kakushima, Y.Kataoka, A.Nishiyama, N.Sugii, H.Wakabayashi, K.Tsutsui, K.Natori, H.Iwai2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsSuppression of short channel eects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last processM.Oda, T.Irisawa, E.Mieda, Y.Kurashima, H.Takagi, W.Jevasuwan, T.Maeda, O.Ichikawa, T.Ishihara, T.Osada, Y.Miyamoto, T.Tezuka2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsMulti-layer graphene interconnects grown by CVD for future LSID.Kondo, H.Nakano, B.Zhou, I.Kubota, K.Hayashi, J.Yamaguchi, T.Ohkochi, M.Kotsugi, S.Sato, N.Yokoyama2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsIntercalated Multi-layer Graphene Wire and Metal/Multi-layer Graphene Hybrid Wire Obtained by Annealing Sputtered Amorphous CarbonM.Sato, M.Takahashi, H.Nakano, Y.Takakuwa, M.Nihei, S.Sato, N.Yokoyama 2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsShrinking Circuits Area with High-Mobility Channel MOSFETsM.Ono T.Tezuka 2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsSynthesis of Perovskite Structure SrHfO3 Thin Films on Si Substrates Using RF Sputtering and Rapid Thermal AnnealS.Migita, Y.Morita, M.Masahara, H.Ota2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsTheoretical Investigation of Electrical Properties of MoS2 FETs with Strained Channel LayerN.Harada, S.Sato, N.Yokoyama 2013年9月26日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsApproach for the Preferential Synthesis of Semiconductor Single-Walled Carbon Nanotubes for Device ApplicationS.Sakurai, M.Yamada, H.Nakamura, D.Futaba, K.Hata2013年9月25日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsFormation of Epitaxial Nickel Monogermanide on Ge(100) by Annealing of Ni/Sn BilayerM.Koike, Y.Kamimuta, Y.Moriyama, Y.Kamata, E.Kurosawa, T.Tezuka2013年9月25日Fukuoka2013 International Conference on Solid State Devices and MaterialsThe Japan Society of Applied PhysicsIsland shape and Domain Structure of Graphene Grown on Copper Foil by Chemical Vapor DepositionK.Hayashi, A.Yamada, S.Sato and N.Yokoyama2013年9月17日Kyoto2013 JSAP-MRS Joint SymposiaThe Japan Society of Applied PhysicsPoly Germanium Junctionless Tri-gate FET for Future Stacked 3-D Circuits IntegrationY.Kamata, Y.Kamimuta, K.Ikeda, K.Furuse, M.Ono, M.Oda, Y.Moriyama, K.Usuda, M.Koike, T.Irisawa, E.Kurosawa, T.Tezuka2013年9月17日Warsaw, PolandE-MRS 2013 FALL MEETINGEuropean Material Science SocietyIn-situ P-doped Ge-rich SiGe selective epitaxy for strained Ge-nMISFETsY.Moriyama, Y.Kamimuta, Y.Kamata, K.Ikeda, S.Takeuchi, A.Sakai, T.Tezuka2013年9月16日Warsaw, PolandE-MRS 2013 FALL MEETINGEuropean Materials Research SocietyElectric and Optical Studies on Non-thermal Recording Mechanism of GeTe/Sb2Te3 Superlattice Phase Change MaterialT.Shintani, T.Saiki2013年9月10日Berlin, GermanyEPCOS 2013 SymposiumEPCOS CommitteeIntercalated multi-layer graphene grown by CVD for LSI interconnectsD.Kondo, H.Nakano, B.Zhou, I.Kubota, K.Hayashi, K.Yagi, M.Takahashi, M.Sato, S.Sato, N.Yokoyama2013年6月15日Kyoto2013 IEEE International Interconnect Technology Conference (IITC 2013)IEEE Electron Devices SocietyNumerical Simulations of High Heat Dissipation Technology in LSI 3-D Packaging Using Carbon Nanotube Through Silicon Via (CNT-TSV) and Thermal Interface Material (CNT-TIM)T.Kawanabe, A.Kawabata, T.Murakami, M.Nihei, Y.Awano2013年6月14日Kyoto2013 IEEE International Interconnect Technology Conference (IITC 2013)IEEE Electron Devices SocietySynthetic electric eld tunnel FETs: drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channelY.Morita, T.Mori, S.Migita, W.Mizubayashi, A.Tanabe, K.Fukuda, T.Matsukawa, K.Endo, S.O'uchi, Y.X.Liu, M.Masahara, H.Ota2013年6月13日Kyoto2013 Symposia on VLSI Technology and CircuitsIEEE JSAPSuperior Cut-O Characteristics of Lg=40nm Wn=7nm Poly Ge Junctionless Tri-gate FET for Stacked 3D Circuits IntegrationY.Kamata, Y.Kamimuta, K.Ikeda, K.Furuse, M.Ono, M.Oda, Y.Moriyama, K.Usuda, M.Koike, T.Irisawa, E.Kurosawa, T.Tezuka2013年6月12日Kyoto2013 Symposia on VLSI Technology and CircuitsIEEE JSAPDemonstration of InGaAs/Ge Dual Channel CMOS Inverters with High Electron and Hole Mobility Using Staked 3D IntegrationT. Irisawa, M. Oda, Y. Kamimuta, Y. Moriyama, K. Ikeda, E. Mieda, W. Jevasuwan, T. Maeda, O. Ichikawa, T. Osada, M. Hata, and T. Tezuka2013年6月11日Kyoto2013 Symposia on VLSI Technology and CircuitsIEEE JSAPEnhancement of Hole Mobility and Cut-o Characteristics of Strained Ge Nanowire pMOSFETs by using Plasma Oxidized GeOx Inter-Layer for Gate StackK.Ikeda, Y.Kamimuta, Y.Moriyama, M.Ono, K.Usuda, M.Oda, T.Irisawa, K.Furuse, T.Tezuka2013年6月11日Kyoto2013 Symposia on VLSI Technology and CircuitsIEEE JSAPGraphene underneath MetalsA.Toriumi, K.Nagashio, T.Moriyama, R.Ifuku2013年5月15日Toronto, Canada 223rd ECS MeetingThe Electrochmical SocietyTensor Evaluation of Stress Relaxation Prole in Strained SiGe Nanostructures on Si SubstrateM.Tomita, D.Kosemura, K.Usuda, A.Ogura2013年5月14日Toronto, Canada 223rd ECS MeetingThe Electrochemical SocietyAnalysis of Threshold Voltage Shifts in Double Gate Tunnel FinFETs: Eects of Improved Electrostatics by Gate Dielectrics and Back Gate EectsW.Mizubayashi, K.Fukuda, T.Mori, K.Endo, Y.X.Liu, T.Matsukawa, S.O'uchi, Y.Ishikawa, S.Migita, Y.Morita, A.Tanabe, J.Tsukada, H.Yamauchi, M.Masahara, H.Ota2013年4月24日Hsinchu, Taiwan2013 International Symposium on VLSI Technology, Systems and ApplicationsITRI、IEEE EDSShort Channel Poly-Ge Junction-less p-type FinFETs for BEOL TransistorsY.Kamimuta, K.Ikeda, K.Furuse, T.Irisawa, T.Tezuka2013年4月23日Hsinchu, Taiwan2013 International Symposium on VLSI Technology, Systems and ApplicationsITRI、IEEE EDSSpin Storage in Interfacial Phase Change Memory Using Topological Insulating PropertyJ.Tominaga, A.V.Kolobov, P.Fons, M.Hase, S.Murakami2013年4月4日San Francisco, U.S.A2013 MRS Spring Meeting & ExhibitsMaterials Research SocietyNanometer Resolution XANES Imaging of In situ Switched Individual PC-RAM DevicesJ.H.Richter, P.Fons, A.Kolobov, J.Tominaga, T.Nakano, X.Wang, K.Mitrofanov, H.Osawa, M.Suzuki2013年4月4日San Francisco, U.S.A2013 MRS Spring Meeting & ExhibitsMaterials Research SocietyCrucial Role of Te Lone-pair Electrons in GeSbTe Phase Change Memory AlloysA.Kolobov, P.J.Fons, J.Tominaga2013年4月4日San Francisco, U.S.A2013 MRS Spring Meeting & ExhibitsMaterials Research Society58

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