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国際学会発表 2012年度招待講演発表題目発表者発表日開催地学会名主催者Electrostatically-Reversible Polarity of Dual-Gated Graphene TransistorsS.Nakaharai2013年3月25日Lausanne, SwitzerlandFunctionality-Enhanced Devices Workshop(FED'13)Ecole polytechnique fédérale de LausanneSelf-organizing graphene ribbon formation and electrical properties of graphene irradiated with He ionsS.Sato, N.Yokoyama2013年3月3日Kirchberg in Tirol - AustriaIWEPNM2013IWEPNM organizing committeeIntrinsic graphene/metal contactK. Nagashio, R. Ifuku, T. Moriyama, T. Nishimura, and A. Toriumi2012年12月10日San Francisco, USA2012 IEEE International Electron Devices MeetingIEEEChallenges in green nanoelectronics: Growing expectations for the Tsukuba Innovation Arena in JapanN.Yokoyama2012年12月3日Hawaii, USAWINDS 2012WINDS実行委員会Band engineering in graphene for future electronicsK.Tsukagoshi2012年11月29日Las Vegas, USA2012 Energy, Materials and Nanotechnology (EMN2012) fall meetingOAHOSTGrowth and TEM observation of CVD graphene and its application to transistorsS.Sato2012年11月19日Hsinchu, Taiwan2012 International Graphene WorkshopITRI and National Tsing Hua University, TaiwanBand engineering in graphene for future electronicsK.Tsukagoshi2012年11月8日Saint Aubin, Francehe International Symposium on Graphene Devices (ISGD2012)Synchrotron SOLEIL Interfacial Phase Change Memory with Topological Insulator CharacteristicsJ.Tominaga, A.Kolobov, J.P.Fons2012年11月2日SingaporeNVMTS 2012Data Storage InstituteCNT/graphene technologies for future carbon-based interconnectsM.Nihei, A.Kawabata, T.Murakami, M.Sato, N.Yokoyama2012年10月30日Xi'an, ChinaInternational Conference on Solid-State and Integrated Circuit TechnologyIEEESynthesis of Nanocarbon Materials and their Interconnect ApplicationS.Sato, M.Nihei, N.Yokoyama2012年10月25日Univ.TokyoADMETA2012The Japan Society of Applied PhysicsGOI substrates - Fabrication and Characterization A.Sakai, S.Yamasaka, J.Kikkawa, Y.Nakamura, Y.Moriyama, T.Tezuka, S.Takeuchi, K.Izunome2012年10月10日Hawaii, USAECS meetingThe Electrochemical SocietyImpact of high-k/metal gate technology on TFETs : subthreshold characteristics and gate leakageT.Mori2012年10月3日NY, USA9th International Symposium on Advanced Gate Stack TechnologySEMATECHGate tunable tunneling transport in bilayer grapheneK.Tsukagoshi, H.Miyazaki, S.-L.Li, A.A.Ferreira, S.Nakaharai2012年7月31日Polvijarvi, Finland3rd Workshop on Nanocarbon Photonics and Optoelectronics (NPO2012) University of Eastern FinlandRoom temperature magnetoresistance from phase-change memoryJ.Tominaga, J.P.Fons, A.Kolobov2012年7月23日Sydney, AustraliaWUN-SPIN 2012the University of SydneyOrderand Disorder in Ge-rich(GeTe)x(Sb2Te3)1-x Alloy: Views from dierent length scalesJ.P.Fons, T.Matsunaga, A.Kolobov, M. Krbal, J.Tominaga, N. Yamada2012年7月10日Tampere, FinlandEPCOS 2012EPCOS SYMPOSIUM COMMITTEEUnusual Magnetic Properties in Interfacial Phase-change MemoryJ.Tominaga, A.Kolobov, J.P.Fons, M.Hase, S.Murakami2012年7月9日Tampere, FinlandEPCOS 2012EPCOS SYMPOSIUM COMMITTEEGate-tunable property control in graphene channelK.Tsukagoshi2012年7月6日KyotoThe Nineteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD’12)The Japan Society of Applied PhysicsElectrical Properties of The Composite Structure Consisting of Multi-Layer Graphene and Multi-Walled Carbon NanotubesD.Kondo, S.Sato, M.Nihei, N.Yokoyama2012年7月6日SingaporeIUMRS-ICYRAMMRS SingaporePotential of GeSn Alloys for Application to Si NanoelectronicsS. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka2012年6月28日Okinawa2012 Asia-Pacic Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)The Institute of Electronics, Information and Communication Engineers (IEICE)Si-based Tunnel Field-Eect TransistorsT.Mori2012年6月17日 The Pennsylvania State University, USADevice Research ConferenceIEEEMaterial properties and applications of Ge1-xSnx alloys for Ge NanoelectronicsO. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima2012年6月5日Berkeley, USA6th International Silicon-Germanium Technology and Device Meeting (2012 ISTDM)IEEEEntropy-controlled phase-change MemoryJ.Tominaga2012年5月29日Kyoto, Japan12th International Workshop on Stress-Induced Phenomena in Microelectronics京都大学Room Temperature Giant Magnetoresistivity and Magnetoreection from Interfacial Phase-change Memory [(GeTe)x(Sb2Te3)y]zJ.Tominaga, J.P.Fons, A.Kolobov,T.Shintani, M.Hase2012年4月10日 San Francisco, USA2012 MRS Spring MeetingMaterials Research SocietyToward application of graphene to transistors: CVD growth, nanoribbon formation, and electrical propertiesS.Sato, N.Yokoyama2012年4月10日 San Francisco, USA2012 MRS Spring MeetingMaterials Research Society一般発表(主要学会)Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors with He Ion Irradiated Channel: Toward Recongurable CMOS ApplicationsS.Nakaharai, T.Iijima, S.Ogawa, S.Suzuki, K.Tsukagoshi, S.Sato, N.Yokoyama2012年12月10日San Francisco, USA2012 IEEE International Electron Devices MeetingIEEEImproved Thermal Conductivity by Vertical Graphene Contact Formation for Thermal TSV M.Nihei, A.Kawabata, T.Murakami, M.Sato, N.Yokoyama2012年12月10日San Francisco, USA2012 IEEE International Electron Devices MeetingIEEEElectrical Performances of Junctionless-FETs at the Scaling Limit (LCH = 3 nm) S.Migita, Y.Morita, M.Masahara, H.Ota2012年12月10日San Francisco, USA2012 IEEE International Electron Devices MeetingIEEESelective graphene ribbon formation on Cu twin crystalsS.Sato, K.Hayashi, M.Ikeda, A.Yamada, J.Yamaguchi, C.Kaneda, N.Yokoyama2012年11月26日 Boston, USA2012 MRS Fall Meeting Materials Research SocietyNumerical Simulations of High Heat Dissipation Technology in LSI 3-D packaging using CNT Through Silicon Via (TSV) and Thermal Interface Material (TIM)T.Kawanabe, M.Nihei, Y.Awano2012年11月25日Boston2012 MRS Fall MeetingMaterials Research SocietyFormation and Stress Characterization of NiGe/Ge(110) and Ge(001) ContactsY. Deng, J. Yokoi, O. Nakatsuka, and S. Zaima2012年10月23日TokyoAdvanced Metallization Conference 2012: The 22nd Asian SessionThe Japan Society of Applied PhysicsNumerical Simulations of High Heat Dissipation Technology in LSI 3-D Packaging Using CNT Through Silicon Via (TSV) and Thermal Interface Material (TIM)T.Kawanabe, M.Nihei, Y.Awano2012年10月23日Tokyo Univ.ADMETA2012The Japan Society of Applied PhysicsEect of In0.53Ga0.47As surface Nitridation on Electrical Characteristics of High-k/ CapacitorsY. Suzuki, D. Zadeh, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, and H. Iwai2012年10月7日Hawaii, USA PRiME 2012, 222nd ECS meetingECS,The Electrochemical Society of Japan First Demonstration of Threshold Voltage Control by Sub-1V Back-gate Biasing for Thin Body and Buried-oxide (TBB) Ge-on-Insulator (GOI)MOSFETs for Low-power OperationK.Ikeda, Y.Moriyama, M.Ono, Y.Kamimuta, T.Irisawa, Y.Kamata, A.Sakai, T.Tezuka2012年10月4日 California, USA2012 IEEE International SOI ConferenceIEEEHigh Mobility p-n Junction-less InGaAs-OI Tri-gate nMOSFETs with Metal Source/Drain for Ultra-low-power CMOS Applications T.Irisawa, M.Oda, K.Ikeda, Y.Moriyama, E.Mieda, W.Jevasuwan, T.Maeda, O.Ichikawa, T.Ishihara, M.Hata, T.Tezuka2012年10月4日 California, USA2012 IEEE International SOI ConferenceIEEEComparative Study of Schottky Barrier Height Modulation in S-introduced NiGe/Ge and NiSi/Si JunctionsM.Koike, Y.Kamimuta, T.Tezuka2012年9月27日kyoto2012 INternational Conference on Solid State Devices and Materials (SSDM 2012)The Japan Society of Applied PhysicsTensor Evaluation of Anisotropic Stress Relaxation in Mesa-shaped SiGe Layer on Si Substrate by EBSPM.Tomita, M.Nagasaka, D.Kosemura, K.Usuda, T.Tezuka, A.Ogura2012年9月27日kyoto2012 INternational Conference on Solid State Devices and Materials (SSDM 2012)The Japan Society of Applied PhysicsMeasurements of Anisotropic Biaxial Stresses in x = 0.15 and 0.30 Si1-xGex on Si Nanostructures by Oil-Immersion Raman SpectroscopyD.Kosemura, M.Tomita, K.Usuda, T.Tezuka, A.Ogura2012年9月27日kyoto2012 INternational Conference on Solid State Devices and Materials (SSDM 2012)The Japan Society of Applied Physics59

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