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データ編DATA論文・雑誌発表著者タイトル誌名巻・号(年)頁J.Tominaga, A.V.Kolobov, P.Fons, T.Nakano, S.MurakamiFerroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb2Te3 SuperlatticesAdvanced Materials Interfacesto be publishedK.Yagi, A.Yamada, K.Hayashi, N.Harada, S.Sato, N.YokoyamaDependence of Field-Eect Mobility of Graphene Grown by Thermal Chemical Vapor Deposition on its Grain SizeJapanese Journal of Applied Physicsto be publishedT.Mori, T.Yasuda, K.Fukuda, Y.Morita, S.Migita, A.Tanabe, T.Maeda, W.Mizubayashi, S.O'uchi, Y.Liu, M.Masahara, N.Miyata, H.OtaUnexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel eld-eect transistorsAPPLIED PHYSICS EXPRESSVol. 7 (2014) pp. 024201N.Harada, S.Sato, N.YokoyamaComputational study on electrical properties of transition metal dichalcogenide eld-eect transistors with strained channelJOURNAL OF APPLIED PHYSICSVol. 115 (2014) pp. 034505Yen-Fu Lin, W.Li, S.-L.Li, Y. Xu, A.Aparecido-Ferreira, K.Komatsu, H.Sun, S.Nakaharai, K.TsukagoshiBarrier inhomogeneities at vertically stacked graphene-based heterostructuresNanoscaleVol. 6 No.2 (2014) pp. 795M.Sato, S.Ogawa, M.Inukai, E.Ikenaga, T.Muro, Y.Takakuwa, M.Nihei, N. YokoyamaElectrical Properties and Reliability of Networked-Nanographite Wires Grown on SiO2 Dielectric without Catalysts for Multi-layer Graphene InterconnectsMICROELECTRONIC ENGINEERINGVol. 112 (2013) pp.110T.Shintani, T.Saiki Dependence of Switching Characteristics of GeTe/Sb2Te3 Superlattice Phase Change Materials on Electric Pulse Width and Optical Polarization DirectionAPPLIED PHYSICS EXPRESSVol. 6 (2013) pp.111401K.Fukuda, T.Mori, W.Mizubayashi, Y.Morita, A.Tanabe, M.Masahara, T.Yasuda, S.Migita, H.OtaA compact model for tunnel eld-eect transistors incorporating nonlocal band-to-band tunnelingJOURNAL OF APPLIED PHYSICSVol. 114 (2013) pp. 144512H. Oomine, D. H. Zadeh, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. IwaiElectrical characterization of atomic layer deposited La2O3 lms on In0.53Ga0.17As substratesECS TransactionsVol. 58 No. 7 (2013) pp.385H.S.Song, S.-L.Li, L.Gao, Y. Xu, K.Ueno, Y.B.Cheng, K.TsukagoshHigh-Performance Top-Gated Monolayer SnS2 Field-Eect Transistors and Their Integrated Logic CircuitsNanoscaleVol. 5 No. 20 (2013) pp. 9666-9670M.-Y. Chan, K. Komatsu, S.-L.Li, Y.Xu, P.Darmawan, H.Koramochi, S.Nakaharai, K.Watanabe, T.Taniguchi, K.TsukagoshiSuppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal Boron Nitride substratesNanoscaleVol. 5 No. 20 (2013) pp. 9572N.Harada, S.Sato, N.YokoyamaTheoretical Investigation of Graphene Nanoribbon FETs Designed for Digital Applications Japanese Journal of Applied PhysicsVol.52 (2013) pp.094301R.Ifuku, K.Nagashio, T.Nishimura, A.ToriumiThe density of states of graphene underneath a metal electrode and its correlation with the contact resistivityAppl. Phys. Lett.Vol. 103 No. (2013) pp. 033514T.Moriyama, K.Nagashio, T.Nishimura, A.ToriumiCarrier density modulation in graphene underneath the Ni electrodeJ. Appl. Phys.Vol. 114 No. (2013) pp. 024503S.-L. Li, K.Wakabayashi, Y.Xu, Y.-F.Lin. M.Y.Chen, K.Komatsu, S.Nakaharai, A.Aparecido-Ferreira, W.W. Li, K.TsukagoshiThickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Eect TransistorsNano LettersVol. 13 No. 8 (2013) pp. 3546W.Li, S-L.Li, K.Komatsu, A.A-Ferreira, Y-F. Lin, Y.Xu, M.Osada, T.Sasaki, K.TsukagoshiRealization of graphene eld-eect transistor with high-j HCa2Nb3O10 nanoake as top-gate dielectricApplied Physics LettersVol.103 (2013) pp.023113S-L.Li, H.Miyazaki, H.Song, H.Kuramochi, S.Nakaharai, K.TsukagoshiQuantitative Raman Spectrum and Reliable Thickness Identication for Atomic Layers on Insulating SubstratesACS NANOVol.7 No.7 (2013) pp.7381S.Nakaharai, T.Iijima, S.Ogawa, S.Suzuki, S-L. Li, K.Tsukagoshi, S.Sato, N.YokoyamaConduction Tuning of Graphene Based on Defect-Induced LocalizationACS NANOVol.7 No.7 (2013) pp.5694Y.Takagaki, A.Giussani, J.Tominaga, U.Jahn, R.CalarcoTransport properties in a Sb–Te binary topological-insulator system Journal of Physics: Condensed MatterVol.25 (2013) pp.345801S.Soeya, T.Shintani, T.Odaka, R.Kondou, J.TominagaUltra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100-X/Sb2Te3 diluted superlattice systemApplied Physics LettersVol.103 (2013) pp.053103M.Inukai, E.Ikenaga, T.Muro , S.Ogawa, Y.Ojiro, Y.Takakuwa, M.Sato, M.Nihei, N.YokoyamaSpectroscopic Analysis of Graphitization and Grain Orientation of Carbon Films Grown by Photoemission-Assisted Plasma-Enhanced Chemical Vapor DepositionJapanese Journal of Applied PhysicsVol. 52 (2013) pp. 065503K.Tanaka, N.Aratani, D.Kuzuhara, S.Sakamoto, T.Okujima, N.Ono, H.Uno, H. YamadaA soluble bispentacenequinone precursor for creation of directly 6,6′-linked bispentacenes and a tetracyanobipentacenequinodimethaneRSC Adv.Vol. 3 No. (2013) pp. 15310N.Nagamura, K.Horiba, S.Toyoda, S.Kurosumi, T.Shinohara, M.Oshima, H.Fukidome, M.Suemitsu, K.Nagashio, A.ToriumiDirect observation of charge transfer region at interfaces in graphene devicveAppl. Phys. Lett.Vol. 102 No. (2013) pp. 241604Y.Morita, S.Migita, W.Mizubayashi, M.Masahara, H.OtaTwo-step annealing eects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacksSolid-State ElectronicsVol.84 (2013) pp.58K.Usuda, T.Tezuka, D.Kosemura, M.Tomita, A.OguraCharacterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman methodSolid-State ElectronicsVol.83 (2013) pp.46Y.Moriyama, K.Ikeda, Y.Kamimuta, M.Oda, T.Irisawa, Y.Nakamura, A.Sakai, T.TezukaFabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layersSolid-State ElectronicsVol. 83 (2013) pp.42Y.Morita, T.Mori, S.Migita, W.Mizubayashi, A.Tanabe, K.Fukuda, M.Masahara, H.OtaTunnel Field-Eect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last ProcessesJapanese Journal of Applied PhysicsVol.52 (2013) pp.04CC25M.Sato, M.Takahashi, H.Nakano, T.Muro, Y.Takakuwa, S.Sato, M.Nihei, N.YokoyamaHigh-Current Reliability and Growth Conditions of Multilayer Graphene Wire Obtained by Annealing Sputtered Amorphous CarbonJapanese Journal of Applied PhysicsVol.52 No.4 (2013) pp.04CB07A.Kawabata, T.Murakami, M.Nihei, N.YokoyamaGrowth of Dense, Vertical and Horizontal Graphene and its Thermal PropertyJapanese Journal of Applied PhysicsVol.52 No.4 (2013) pp.04CB06M.Tomita, M.Nagasaka, D.Kosemura, K.Usuda, T.Tezuka, A.OguraTensor Evaluation of Anisotropic Stress Relaxation in Mesa-shaped SiGe Layer on Si Substrate by EBSPJapanese Journal of Applied PhysicsVol.52 No.4 (2013) pp.04CA06D.Kosemura, M.Tomita, K.Usuda, T.Tezuka, A.OguraMeasurements of Anisotropic Biaxial Stresses in Si1-xGex/Si Mesa Structures by Oil-Immersion Raman SpectroscopyJapanese Journal of Applied PhysicsVol.52 No.4 (2013) pp.04CA05S.Migita, Y.Morita, M.Masahara, H.OtaFabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Eect Transistors on Silicon-On-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diusion of DopantsJapanese Journal of Applied PhysicsVol.52 No.4 (2013) pp.04CA01J.Yamaguchi, K.Hayashi, S.Sato, N.YokoyamaPassivating chemical vapor deposited graphene with metal oxides for transfer and transistor fabrication processesApplied Physics LettersVol.102 No.14 (2013) pp.143505M.Krbal, A.V.Kolobov, P.Fons, K.V.Mitrofanov, Y.Tamenori, J.Hegedüs, S.R.Elliott, J.TominagaSelective detection of tetrahedral units in amorphous GeTe-based phase change alloys using Ge L3-edge x-ray appearance near-edge structure spectroscopyAPPLIED PHYSICS LETTERSVol.102 (2013) pp.111904K.Johguchi, T.Shintani, T.Morikawa, K.Yoshioka, K.Takeuchix10 Fast Write, 80% Energy Saving Temperature Controlling Set Method for Multi-Level Cell Phase Change Memo-ries to Solve the Scaling BlockadeSolid-State ElectronicsVol. 81 (2013) pp. 7862

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