横山FIRST活動サマリ
63/68

T.Asano, Y.Shimura, O.Nakatsuka, S.ZaimaInuence of Sn Incorporation and Growth Temperature on Crystallinity of Ge1-xSnx Layers Heteroepitaxially Grown on Ge(110) SubstratesThin Solid FilmsVol531 (2013) pp.504-508K.Hayashi, S.Sato, N.YokoyamaAnisotropic graphene growth accompanied with step bunching on a dynamic copper surfaceNANOTECHNOLOGYVol. 24 No. 2 (2013) pp.025603A.Sakai, S.Yamasaka, J.Kikkawa, S.Takeuchi, Y.Nakamura, Y.Moriyama, T.Tezuka, K.IzunomeGe-on-insulator, wafer bonding, MOSFET, mobility, interface state density ECS TransactionVol.50 (2013) pp.709-725A.A.Ferreira, H.Miyazaki, S.Li, K.Komatsu, S.Nakaharai, K.Tsukagoshi Enhanced current-rectication in bilayer graphene with an electrically tuned sloped bandgapNANOSCALEVol.4 No.24 (2012) pp.7842D.Kosemura, M.Tomita, K.Usuda, A.OguraInvestigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman spectroscopy APPLIED PHYSICS EXPRESSVol.5 (2012) pp.111301J.Tominaga, X.Wang, A.V.Kolobov, P.FonsA reconsideration of the thermodynamics of phase-change switchingPhysica Status Solidi (b)Vol. 249 No.10 (2012) pp.1932S.Li, H.Miyazaki, H.Song, H.Kuramochi, S.Nakaharai, K.TsukagoshiQuantitative Raman Spectrum and Reliable Thickness Identication for Atomic Layers on Insulating SubstratesACS NANOVol.6 No.8 (2012) pp.7381B.Sa, J.Zhou, Z.Sun, J.Tominaga, R.AhujaTopological Insulating in GeTe/Sb2Te3 Phase-Change SuperlatticePHYSICAL REVIEW LETTERSVol.109 No.9 (2012) pp.096802S.Soeya, T.ShintaniCrystalline structure of GeTe layer in GeTe/Sb2Te3 superlattice for phase change memoryJournal of Applied PhysicsVol.112 (2012) pp.034301K.Hayashi, S.Sato, M.Ikeda, C.Kaneda, N.YokoyamaSelective graphene formation on copper twin crystals Journal of the American Chemical SocietyVol.134 No.30 (2012) pp.12492M.V. Lee, H.Hiura, H.Kuramochi, K.TsukagoshiConcerted Chemical-Mechanical Reaction in Catalyzed Growth of Conned Graphene Layers into Hexagonal DisksJournal of Physical Chemistry CVol. 116 No.16 (2012) pp.9106-9113H.Miyazaki, S.Li, S.Nakaharai, K.TsukagoshiUnipolar transport in bilayer graphene controlled by multiple p-n interfacesAPPLIED PHYSICS LETTERSVol.100 No.16 (2012) pp.163115M.Sato, M.Inukai, E.Ikenaga, T.Muro, S.Ogawa, Y.Takakuwa, H.Nakano, A.Kawabata, M.Nihei, N.YokoyamaFabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous CarbonJapanese Journal of Applied PhysicsVol. 51 (2012) pp.04DB01M.Aizuddin, N.Harada, Y.AwanoMonte Carlo Simulations of High Carrier Velocity Acceleration inGraphene Field Eect Transistors by Local Channel Width ModulationAPPLIED PHYSICS EXPRESSVol. 5 (2012) pp.045102H.S.Song, S.L.Li, H.Miyazaki, S.Sato, K.Hayashi, A.Yamada, N.Yokoyama, K.TsukagoshiOrigin of the relatively low transport mobility of graphene grown through chemical vapor depositionScientic ReportVol. 2 No. (2012) pp. 337/1-6D.Kosemura, K.Usuda, M.Tomita, A.OgusuEvaluation of Anisotropic Strain Relaxation in SSOI Nanostructure by Oil-Immersion Raman Spectroscopys Japanese Journal of Applied PhysicsVol.51 No.2 (2012) pp.02BA03H.Miyazaki, S.-L.Li, H.Hiura, K.Tsukagoshi, A.KandaObservation of tunneling current in semiconducting graphene p-n junctionsJournal of Physical Society of JapanVol.81 No.1 (2012) pp.014708Y.Shimura, T.Asano, O.Nakatsuka, S.ZaimaCrystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of SnApplied Physics ExpressVol.5 (2012) pp.015501H.Kuramochi, S.Odaka, K.Morita, S.Tanaka, H.Miyazaki, M.V.Lee, H.Hiura, K.TsukagoshiRole for Atomic Terraces and Steps of Epitaxial Graphene in Electron Transport PropertiesAIP advancesVol. 2 No. 1 (2012) pp. 012115/1-10R.E.Simpson, P.Fons, A.V.Kolobov, M.Krabel, J.TominagaEnhanced crystallization of GeTe from an Sb2Te3 templateAPPLIED PHYSICS LETTERSVol.100 (2012) pp.021911S.Nakaharai, T.Iijima, S.Ogawa, H.Miyazaki, S.-L.Li, K.Tsukagoshi, S.Sato, N.YokoyamaGate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon APPLIED PHYSICS EXPRESSVol.5 (2012) pp.015101H.Miyazaki, S.-L.Li, H.Hiura, K.Tsukagoshi, A.KandaObservation of tunneling current in semiconducting graphene p-n junctionsJournal of Physical Society of JapanVol. 81 No.1 (2012) pp. 014708/1-7M.V.Lee, H.Hiura, A.Tyurnina, K.TsukagoshiControllable Gallium Melt-Assisted Interfacial Graphene Growth on SiCDiamond and Related MaterialsVol. 24 No. (2012) pp.34-38D.Zade, T.Kanda , K.Yamashita , K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Nohira, H.IwaiCapacitance-voltage characterization of La2O3 metal-oxide-semiconductor structures on In0.53Ga0.47As substrate with dierent surface treatment methodsJapanese Journal of Applied PhysicsVol. 50 (2011) pp. 10PD03J.Tominaga, R E.Simpson, P.Fons, A.V.KolobovElectrical-eld induced gaint magnetoresistivity in )non-magnetic) phase change lms APPLIED PHYSICS LETTERSVol.99 (2011) pp.152105R.E.Simpson, P.Fons, A.V.Kolobov, T.Fukaya, M.Krbal, T.Yagi, J.TominagaInterfacial phase-change memory Nature nanotechnologyVol.6 (2011) pp.501–505C.M.Orofeo, H.Ago, B.Hu, M.TsujiSynthesis of large-area, homogeneous, single layer graphene by annealing amorphous carbon on Co and NiNano Res.Vol.4, 531-540 (2011)S.-L.Li, H.Miyazaki, M.V.Lee, C.Liu, A.Kanda, K.TsukagoshiComplementary-like Semiconducting Graphene Logic Gates Controlled by Electrostatic DopingSmallVOl. 7, 1552-1556 (2011)K.Nagashio, T.Yamashita, T.Nishimura, K.Kita and A.ToriumiElectrical transport properties of graphene on SiO2 with specic surfacestructuresJournal of Applied PhysicsVol. 110 No. (2011) pp. 024513K.Nagashio, A.ToriumiDensity-of-States Limited Contact Resistance in Graphene Field-Eect TransistorsJapanese Journal of Applied PhysicsVol. 50 (2011) 070108D.Zade, K.Kakushima, T.Kanda, Y.C.Lin, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, E.Y.Chang, K.Natori, T.Hattori, H.IwaiImproving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniquesMicroelectronic EngineeringVol. 88, pp. 1109-1112 (2011)T.Mori, T.Yasuda, T.Maeda, W.Mizubayashi, S.Ouchi, Y.Liu, K.Sakamoto, M.Masahara, H.OtaTunnel eld eect transistors with extremely low o-current using shadowing eect in drain implantationJapanese Journal of Applied PhysicsVol. 50 (2011) 06GF14N.Harada, Y.Awano, S.Sato, N.Yokoyama Monte Carlo simulation of electron transport in a graphene diode with a linear energy band dispersionJournal of Applied PhysicsVol.109 104509 (2011)S.Sato, K.Yagi, D.Kondo, K.Hayashi, A.Yamada, N.Harada, N.YokoyamaLarge-Area Synthesis of Graphene by Chemical Vapor Deposition and Transfer-Free Fabrication of Field-Eect TransistorsECS TransactionsVol. 35 No. 3 (2011) pp. 219T.Kanda, D.Zade, Y.–C.Lin, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, E.Y.Chang, K.Natori, T.Hattori, H.IwaiAnnealing Eect on the Electrical Properties of La2O3/InGaAs MOS CapacitorsECS TransactionsVol. 34, pp. 483-487 (2011)S.-L.Li, H.Miyazaki, H.Hiura, C.Liu, K.TsukagoshiEnhanced Logic Performance with Semiconducting Bilayer Graphene ChannelsACS nanoVol.5, 500-506 (2011)H.Ago, Y.Ito, N.Mizuta, K.Yoshida, B.Hu, C.M.Orofeo, M.Tsuji, K.Ikeda, S.MizunoEpitaxial chemical vapor deposition growth of single-layer graphene over cobalt lm crystallized on sapphireACS NanoVol.4, 7407-7414 (2010)著者タイトル誌名巻・号(年)頁63

元のページ 

10秒後に元のページに移動します

※このページを正しく表示するにはFlashPlayer10.2以上が必要です